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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors Order this document by BDB02C/D PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BDB02C,D 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD BDB02C -80 -80 -5.0 -0.5 1.0 8.0 2.5 20 - 55 to +150 BDB02D -100 -100 Unit Vdc Vdc Vdc Adc Watt mW/C Watt mW/C C CASE 29-05, STYLE 1 TO-92 (TO-226AE) PD TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Voltage (IC = -10 mA, IB = 0) Collector Cutoff Current (VCB = -80 V, IE = 0) (VCB = -100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = -5.0 V) BDB02C BDB02D BDB02C BDB02D IEBO V(BR)CEO ICBO -- -- -- -0.1 -0.1 -100 nAdc -80 -100 -- -- Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) (IC = -500 mA, VCE = -2.0 V) Collector - Emitter Saturation Voltage(1) (IC = -1000 mA, IB = -100 mA) Collector - Emitter On Voltage(1) (IC = -1000 mA, VCE = -1.0 V) hFE 40 25 VCE(sat) VBE(on) -- -- 400 -- -0.7 -1.2 Vdc Vdc -- DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -200 mA, VCE = -5.0 V, f = 20 MHz) Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 -- -- 30 MHz pF v 300 ms, Duty Cycle 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BDB02C,D 400 TJ = 125C hFE, DC CURRENT GAIN 200 25C -55C 100 80 60 40 -0.5 -0.7 VCE = -1.0 V -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 -200 -300 -500 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.6 IC = -10 mA -0.4 -50 mA -100 mA -250 mA -500 mA -0.4 -0.2 -0.2 VCE(sat) @ IC/IB = 10 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 -50 0 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 2. Collector Saturation Region Figure 3. On Voltages VB, TEMPERATURE COEFFICIENT (mV/C) -0.8 -1.2 C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25C -1.6 VB for VBE -2.0 -2.4 10 7.0 Cobo -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 5.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 Figure 4. Base-Emitter Temperature Coefficient Figure 5. Capacitance 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BDB02C,D f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 300 IC, COLLECTOR CURRENT (mA) 200 VCE = -2.0 V TJ = 25C DUTY CYCLE 10% -2 k -1 k -500 -200 -100 -50 -20 30 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -200 -10 -1.0 TA = 25C TC = 25C 10 s 1.0 ms 100 s 100 70 50 dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BDB02C BDB02D -2.0 -5.0 -10 -20 -45 -60 -80 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Current-Gain -- Bandwidth Product Figure 7. Active Region -- Safe Operating Area Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BDB02C,D PACKAGE DIMENSIONS A R P F L B SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 --- 3.43 --- K DIM A B C D F G H J K L N P R V XX G H V 123 D J SECTION X-X NC N CASE 029-05 (TO-226AE) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data *BDB02C/D* BDB02C/D |
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